march 2011 ?2011 fairchild semiconductor corporation FDMS4435BZ rev.c3 www.fairchildsemi.com 1 FDMS4435BZ p-channel power trench ? mosfet FDMS4435BZ p-channel powertrench ? mosfet -30 v, -18 a, 20 m features ? max r ds(on) = 20 m at v gs = -10 v, i d = -9.0 a ? max r ds(on) = 37 m at v gs = -4.5 v, i d = -6.5 a ? extended v gss range (-25 v) for battery applications ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handling capability ? hbm esd protection level >7 kv typical (note 4) ? 100% uil tested ? termination is lead-free and rohs compliant general description this p-channel mosfet is produced using fairchild semiconductor?s advanced power trench ? process that has been especially tailored to minimi ze the on-state resistance. this device is well suited for power management and load switching applications common in notebook computers and portable battery packs. applications ? high side in dc-dc buck converters ? notebook battery power management ? load switch in notebook bottom power 56 top pin 1 g s s s d d d d 4 3 2 1 g s s s d d d d 5 6 7 8 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -30 v v gs gate to source voltage 25 v i d drain current -continuous (p ackage limited) t c = 25 c -18 a -continuous (silicon limited) t c = 25 c -35 -continuous t a = 25 c (note 1a) -9.0 -pulsed -50 e as single pulse avalanche energy (note 3) 18 mj p d power dissipation t c = 25 c 39 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 3.2 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS4435BZ FDMS4435BZ power 56 13 ?? 12 mm 3000 units
FDMS4435BZ p-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2011 fairchild semiconductor corporation FDMS4435BZ rev.c3 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = -250 a, v gs = 0 v -30 v bv dss t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25 c -23 mv/c i dss zero gate voltage drain current v ds = -24 v, v gs = 0 v -1 a i gss gate to source leakage current v gs = 25 v, v ds = 0 v 10 a v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 a -1.0 -1.9 -3.0 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = -250 a, referenced to 25 c 6 mv/c r ds(on) static drain to source on resistance v gs = -10 v, i d = -9.0 a 15 20 m v gs = -4.5 v, i d = -6.5 a 22 37 v gs = -10 v, i d = -9.0 a t j = 125 c 21 28 g fs forward transconductance v ds = -5 v, i d = -9.0 a 25 s c iss input capacitance v ds = -15 v, v gs = 0 v, f = 1 mhz 1540 2050 pf c oss output capacitance 290 390 pf c rss reverse transfer capacitance 260 385 pf r g gate resistance 5 t d(on) turn-on delay time v dd = -15 v, i d = -9.0 a, v gs = -10 v, r gen = 6 917ns t r rise time 10 18 ns t d(off) turn-off delay time 35 56 ns t f fall time 19 33 ns q g total gate charge v gs = 0 v to -10 v v dd = -15 v, i d = -9.0 a 34 47 nc q g total gate charge v gs = 0 v to -4.5 v 18 25 nc q gs gate to source charge 5 nc q gd gate to drain ?miller? charge 9 nc v sd source to drain diode forward voltage v gs = 0 v, i s = -1.9 a (note 2) 0.75 1.2 v v gs = 0 v, i s = -9.0 a (note 2) 0.86 1.5 t rr reverse recovery time i f = -9.0 a, di/dt = 100 a/ s 25 39 ns q rr reverse recovery charge 12 21 nc notes : 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. e as of 18 mj is based on starting t j = 25 c, l = 1 mh, i as = -6 a, v dd = -27 v, v gs = -10 v. 100% tested at l = 0.3 mh, i as = -8 a. 4. the diode connected between the gate and source serves only as protection against esd. no gate overvoltage rating is implied . 50 c/w when mounted on a 1 in 2 pad of 2 oz copper a) b) 125 c/w when mounted on a minimum pad of 2 oz copper.
FDMS4435BZ p-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2011 fairchild semiconductor corporation FDMS4435BZ rev.c3 typical characteristics t j = 25 c unless otherwise noted figure 1. 01234 0 10 20 30 40 50 v gs = -6 v v gs = -3.5 v v gs = -10 v v gs = -4 v v gs = -4.5 v pulse duration = 80 p s duty cycle = 0.5% max -i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 0 1020304050 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = -4 v v gs = -3.5 v v gs = -6 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance - i d , drain current (a) v gs = -4.5 v v gs = -10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = - 9 a v gs = -10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 0 20 40 60 80 t j = 125 o c i d = -9 a t j = 25 o c -v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 12345 0 10 20 30 40 50 t j = 25 o c v ds = -5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 125 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.00.20.40.60.81.01.21.4 0.001 0.01 0.1 1 10 50 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS4435BZ p-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2011 fairchild semiconductor corporation FDMS4435BZ rev.c3 figure 7. 0 8 16 24 32 40 0 2 4 6 8 10 i d = -9 a v dd = -20 v v dd = -15 v -v gs , gate to source voltage (v) q g , gate charge (nc) v dd = -10 v gate charge characteristics figure 8. 0.1 1 10 30 100 1000 5000 f = 1 mhz v gs = 0 v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 1 10 20 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) -i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 8 16 24 32 40 package limited r t jc = 3.2 o c/w v gs = -4.5 v v gs = -10 v -i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs cate temperature figure 11. 03691215182124273033 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 v gs = 0 v t j = 125 o c t j = 25 o c -v gs , gate to source voltage (v) -i g , gate leakage current (a) g a t e l e a k a g e c u r r e n t v s g a t e t o source voltage f i g u r e 1 2 . f o r w a r d b i a s s a f e op erating area 0.05 0.1 1 10 100 0.01 0.1 1 10 100 this area is limited by r ds(on) 100 p s 1 ms 100 ms 1 s dc 10 s 10 ms single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c -i d , drain current (a) -v ds , drain to source voltage (v) typical characteristics t j = 25 c unless otherwise noted
FDMS4435BZ p-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2011 fairchild semiconductor corporation FDMS4435BZ rev.c3 figure 13. single pulse maximum power dissipation 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.5 1 10 100 1000 p (pk) , peak transient power (w) single pulse r t ja = 125 o c/w t a = 25 o c t, pulse width (sec) figure 14. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 2 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMS4435BZ p-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2011 fairchild semiconductor corporation FDMS4435BZ rev.c3 dimensional outlin e and pad layout
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